CSE

commonly memory part number for mobile and computer

2024-09-13 15:27:22

Samsung memory

2024-09-13 15:18:15

Sk hynix memory

2024-09-13 15:14:54

Micron Nand flash

2024-09-13 14:30:06

Micron Dram

2024-09-13 14:26:50

Kioxia UFS&e-MMC for commercial and industrial

            UFS 4.0 Specs Capacity Part Number UFSVersion Max DataRate(MB/s) Supply Voltage OperatingTemperature(℃) Package Size(mm) VCC(V) VCCQ(V) VCCQ2(V) 256GB THGJFJT1E45BATP 4.0 4640 2.4 to 2.7 1.14 to 1.26 - (1) -25 to 85 11.0x13.0x0.8 256GB THGJFLT1E45BATP 11.0x13.0x0.8 256GB THGJFMT1E45BATV 9.0x13.0x0.8 512GB THGJFJT2T85BAT0 11.0x13.0x0.95 512GB THGJFLT2E46BATP 11.0x13.0x0.8 512GB THGJFMT2E46BATV 9.0x13.0x0.8 1TB THGJFLT3E86BATU 11.0x13.0x1.0 1TB THGJFMT3E86BATZ 9.0x13.0x0.9                 UFS 3.1 Spec Capacity Part Number UFSVersion Max DataRate(MB/s) Supply Voltage OperatingTemperature(℃) Package Size(mm) VCC(V) VCCQ(V) VCCQ2(V) 256GB THGJFGT1E45BAIP 3.1 2320 2.4 to 2.7,2.7 to 3.6 1.14 to 1.26 - (1) -25 to 85 11.0x13.0x0.8 512GB THGJFGT2T85BAIU 11.0x13.0x1.0                   eMMC for commercial Capacity Part Number e-MMC Version Max Data Rate(MB/s) Supply Voltage Operating Temperature(℃) Package Size(mm) VCC (V) VCCQ (V) 4GB THGBMNG5D1LBAIT 5.0 400 2.7 to 3.6 1.70 to 1.95,2.7 to 3.6 -25 to 85 11.0x10.0x0.8 THGBMTG5D1LBAIL 11.5x13.0x0.8 8GB THGBMUG6C1LBAIL 5.1 16GB THGAMVG7T13BAIL 1.70 to 1.95 32GB THGAMVG8T13BAIL 64GB THGAMVG9T23BAIL 64GB THGAMSG9T24BAIL 64GB THGAMSG9T15BAIL 128GB THGAMVT0T43BAIR 11.5x13.0x1.0 128GB THGAMST0T24BAIL 11.5x13.0x0.8 128GB THGAMST0T25BAIL                 e-MMC Specs Capacity Part Number e-MMC Version Max Data Rate(MB/s) Supply Voltage Operating Temperature(℃) Package Size(mm) VCC (V) VCCQ (V) 8GB THGBMJG6C1LBAU7 5.1 400 2.7 to 3.6 1.70 to 1.95,2.7 to 3.6 -40 to 105 (1) 11.5x13.0x1.0 16GB THGBMJG7C2LBAU8 11.5x13.0x1.2 32GB THGBMJG8C4LBAU8

2024-09-13 14:16:43

KioxiaUFS and e-MMC for Auto

Auto UFS 4.0 AEC-Q100 2 级 capacity P/N UFSVersion Max rate（MB/s） Power VCC Temperature(℃) (3) Package size(mm) V CC（V） V CCQ（V） VCCQ2（V） 128GB THGJFJT0T25BAB8 4.0 4640 2.4 to 2.7 1.14 to 1.26 - (5) -40 to 105 11.5x13.0x1.2 256GB THGJFJT1T45BAB8 512GB THGJFJT2T85BAB5 11.5x13.0x1.3 AEC-Q100 3 级 capacity P/N UFSVersion Max rate（MB/s） Power VCC Temperature(℃) (4) Package size（mm） V CC（V） V CCQ（V） VCCQ2（V） 128GB THGJFJT0T25BAA8 4.0 4640 2.4 to 2.7 1.14 to 1.26 -(5) -40 to 85 11.5x13.0x1.2 256GB THGJFJT1T45BAA8 512GB THGJFJT2T85BAA5 11.5x13.0x1.3 车载UFS 3.1 / 2.1 规格 AEC-Q100 2 级 （3） capacity P/N UFSVersion Max rate（MB/s） Power VCC Temperature（°C）  （4） Package size（mm） V CC（V） V CCQ（V） VCCQ2（V） 32GB THGAFBG8T13BAB7（6） 2.1 1160 2.7 to 3.6 -  （7） 1.70 to 1.95 -40 to 105 11.5x13.0x1.0 THGAFEG8T13BAB7 64GB THGAFBG9T23BAB8（6） 11.5x13.0x1.2 THGAFEG9T23BAB8 128GB THGAFBT0T43BAB8（6） THGAFET0T43BAB8 256GB THGAFBT1T83BAB5（6） 11.5x13.0x1.3 THGAFET1T83BAB5 64GB THGJFGG9T15BAB8 3.1 2320 2.4 to 2.7,2.7 to 3.6 1.14 to 1.26 -  （8） -40 to 105 11.5x13.0x1.2 128GB THGJFGT0T25BAB8 256GB THGJFGT1T45BAB8 512GB THGJFGT2T85BAB5 11.5x13.0x1.3 AEC-Q100 3 级 capacity P/N UFSVersion Max rate（MB/s） Power VCC Temperature（°C）  （5） Package size（mm） V CC（V） V CCQ（V） VCCQ2（V） 64GB THGJFGG9T15BAA8 3.1 2320 2.4 to 2.7,2.7 to 3.6 1.14 to 1.26 -  （8） -40 to 85 11.5x13.0x1.2 128GB THGJFGT0T25BAA8 256GB THGJFGT1T45BAA8 512GB THGJFGT2T85BAA5 11.5x13.0x1.3 车载e-MMC规格 AEC-Q100 2 级 capacity P/N e-MMCVersion Max rate（MB/s） Power VCC Temperature（°C）  （4） Package size（mm） V CC（V） V CCQ（V） 8GB THGBMJG6C1LBAC7 5.1 400 2.7 to 3.6 1.70 to 1.95,2.7 to 3.6 -40 to 105 11.5x13.0x1.0 16GB THGBMJG7C2LBAC8 11.5x13.0x1.2 32GB THGBMJG8C4LBAC8 64GB THGBMJG9C8LBAC8 32GB THGAMVG8T13BAB7 1.70 to 1.95 11.5x13.0x1.0 64GB THGAMVG9T23BAB8 11.5x13.0x1.2 128GB THGAMVT0T43BAB8 256GB THGAMVT1T83BAB5 11.5x13.0x1.3 AEC-Q100 3 级 capacity P/N e-MMCVersion Max rate（MB/s） Power VCC Temperature(℃) Package size（mm） V CC（V） V CCQ（V） 32GB THGAMVG8T13BAA7 5.1 400 2.7 to 3.6 1.70 to 1.95 -40 to 85 11.5x13.0x1.0 64GB THGAMVG9T23BAA8 11.5x13.0x1.2 128GB THGAMVT0T43BAA8 256GB THGAMVT1T83BAA5 11.5x13.0x1.3

2024-09-13 14:14:27

Kioxia SLC NAND FLASH

2024-09-13 10:39:53

Kioxia XL-FLASH

  XL-FLASH Spec   Capacity P/N Tech Unit Temperature (°C) Package Production 64GB TH58LKG9DA5BA4C(132BGA)TH58LKG9DA5BA4R(154BGA) BiCS FLASH™ MLCSLC mode supported 0 to 70 132Ball BGA12x18mm154Ball BGA11.5x13.5mm Production 128GB TH58LKT0DA5BA8C(132BGA)TH58LKT0DA5BA8R(154BGA) 256GB TH58LKT1DA5BA8H(132BGA)TH58LKT1DA5BA8S(154BGA)

2024-09-13 10:35:55

2024-09-13 10:33:38

2024-09-13 10:30:06

2024-09-13 10:24:39

2024-09-13 10:20:25

DDR3/DDR3L Commercial P/N Capacity Description Package VDD,VDDQ Temperature D1216ECMDXGJD 2Gb 96 球 128Mx16 DDR3/3L 内存 1866Mbps 7.5x13.5x1.2 1.35V1 0°C ~ +95°C D2516ECMDXGJD 4Gb 96 球 256Mx16 DDR3/3L 内存 1866Mbps 7.5x13.5x1.2 1.35V1 0°C ~ +95°C D5128ECMDPGJD 4Gb 78 球 512Mx8 DDR3/3L 内存 1866Mbps 7.5x10.6x1.2 1.35V1 0°C ~ +95°C D2516ECMDXGME 4Gb 96 球 256Mx16 DDR3/3L 内存 2133Mbps 7.5x13.5x1.2 1.35V1 0°C ~ +95°C B5116ECMDXGJD 8Gb 96 球 512Mx16 DDR3/3L 内存 1866Mbps 9x13.5x1.2 1.35V1 0°C ~ +95°C DDR3/DDR3L Memory Industrial P/n Capacity Description Package VDD,VDDQ Temperature D1216ECMDXGJDI 2Gb 96 球 128Mx16 DDR3/3L 内存 1866Mbps 7.5x13.5x1.2 1.35V1 -40°C ~ +95°C D2568ECMDPGJDI 2Gb 78 球 256Mx8 DDR3/3L 内存 1866Mbps 7.5x10.6x1.2 1.35V1 -40°C ~ +95°C D2516ECMDXGJDI 4Gb 96 球 256Mx16 DDR3/3L 内存 1866Mbps 7.5x13.5x1.2 1.35V1 -40°C ~ +95°C D5128ECMDPGJDI 4Gb 78 球 512Mx8 DDR3/3L 内存 1866Mbps 7.5x10.6x1.2 1.35V1 -40°C ~ +95°C D2516ECMDXGMEI 4Gb 96 球 256Mx16 DDR3/3L 内存 2133Mbps 7.5x13.5x1.2 1.35V1 -40°C ~ +95°C B5116ECMDXGJDI 8Gb 96 球 512Mx16 DDR3/3L 内存 1866Mbps 9x13.5x1.2 1.35V1 -40°C ~ +95°C DDR3/DDR3L FBGA Automotive Temp P/N Capacity Package package VDD、VDDQ Temperature D1216ECMDXGMEY 2Gb 96 ball 128Mx16 DDR3/3L 2133Mbps 13.5x7.5x1.2 1.35V1 -40°C ~ +105°C D2516ECMDXGMEY 4Gb 96 ball 256Mx16 DDR3/3L 2133Mbps 13.5x7.5x1.2 1.35V1 -40°C ~ +105°C DDR4 光纤光栅商用温度 P/N Capacity Description Package VDD,VDDQ Temperature D5116AN9CXGRK 8Gb 96 球 FBGA DDR4 C 型温度 7.5x13x1.2 1.2V 0°C ~ +95°C D5116AN9CXGXN 8Gb 96 球 FBGA DDR4 C 型温度 7.5x13x1.2 1.2V 0°C ~ +95°C D2516ACXGXGRK 4Gb 96 球 FBGA DDR4 C 型温度 7.5x13x1.2 1.2V 0°C ~ +95°C DDR4 工业温度 P/N Capacity Description Package VDD,VDDQ Temperature D5116AN9CXGXNI 8Gb 96 球光纤光栅 DDR4 I 型温度 x16 7.5x13x1.2 1.2V -40°C ~ +95°C D1028AN9CPGXNI 8Gb 78 球光纤光栅 DDR4 I 型温度 x8 7.5x13x1.2 1.2V -40°C ~ +95°C LPDDR4 FBGA 光纤光栅商用温度 P/N Capacity Description Package VDD,VDDQ Temperature D0811PM2FDGUK 16Gb 200 球光纤光栅 LPDDR4 C 型温度 10x14.5x1.0 1.1V -25°C ~ +85°C B1621PM2FDGUK 16Gb 200 球光纤光栅 LPDDR4 C 型温度 10x14.5x1.0 1.1V -25°C ~ +85°C LPDDR4 FBGA 工业温度 P/N Capacity Description Package VDD,VDDQ Temperature D0811PM2FDGUKW 8Gb 200 球光纤光栅 LPDDR4 I 型温度 10x14.5x1.0 1.1V -40°C ~ +95°C B1621PM2FDGUKW 16Gb 200 球光纤光栅 LPDDR4 I 型温度 10x14.5x1.0 1.1V -40°C ~ +95°C

2024-09-12 15:07:44

kingston eMCP/ ePOP

   eMCP based on LPDDR3                 P/N Storage capacity Stand package FBGA Temperature NAND DRAM eMMC DRAM (mm) (GB) (Gb) 04EM04-N3GM627 4 4 5 LPDDR3 11.5x13.0x1.0 221 -25°C ~ +85°C 08EM08-N3GML36 8 8 5.1 LPDDR3 11.5x13.0x1.0 221 -25°C ~ +85°C 16EM08-N3GTB29 16 8 5.1 LPDDR3 11.5x13.0x1.0 221 -25°C ~ +85°C 16EM16-N3GTB29 16 16 5.1 LPDDR3 11.5x13.0x1.0 221 -25°C ~ +85°C 32EM16-N3GTX29 32 16 5.1 LPDDR3 11.5x13.0x1.0 221 -25°C ~ +85°C 32EM32-N3HTX29 32 32 5.1 LPDDR3 11.5x13.0x1.1 221 -25°C ~ +85°C 64EM32-N3HTX29 64 32 5.1 LPDDR3 11.5x13.0x1.1 221 -25°C ~ +85°C                  eMCP based on LPDDR4 P/N Capacity Stand Package FBGA Temperature NAND DRAM eMMC DRAM (mm) (GB) (Gb) 04EM08-M4EM627 4 8 5.1 LPDDR4x 8x9.5x0.8 149 -25°C ~ +85°C 16EM16-M4CTB29 16 16 5.1 LPDDR4x 11.5x13.0x1.0 254 -25°C ~ +85°C 32EM16-M4CTX29 32 16 5.1 LPDDR4x 11.5x13.0x1.0 254 -25°C ~ +85°C 32EM32-M4DTX29 32 32 5.1 LPDDR4x 11.5x13.0x1.0 254 -25°C ~ +85°C 64EM32-M4DTX29 64 32 5.1 LPDDR4x 11.5x13.0x1.0 254 -25°C ~ +85°C 128EM32-M4DTX29 128 32 5.1 LPDDR4x 11.5x13.0x1.1 254 -25°C ~ +85°C                 ePoP based on LPDDR3 P/N Capacity Stand Package FBGA Temperature NAND DRAM eMMC DRAM (mm) (GB) (Gb) 04EP04-N3GM627 4 4 5 LPDDR3 10x10x0.8 136 -25°C ~ +85°C 04EP08-N3GM627 4 8 5 LPDDR3 10x10x0.85 136 -25°C ~ +85°C 08EP08-N3GTC32* 8 8 5.1 LPDDR3 10x10x0.85 136 -25°C ~ +85°C 32EP08-N3GTC32 32 8 5.1 LPDDR3 10x10x0.85 136 -25°C ~ +85°C                  ePoP based on LPDDR4x P/N Capacity Stand Package FBGA Temperature NAND DRAM eMMC DRAM (mm) (GB) (Gb) 08EP08-M4ETC32* 8 8 5.1 LPDDR4x 8x9.5x0.8 144 -25°C ~ +85°C 08CP08-M4ETC32* 8 8 5.1 LPDDR4x 8x9.5x0.85 144 -25°C ~ +85°C 16EP08-M4ETC32 16 8 5.1 LPDDR4x 8x9.5x0.8 144 -25°C ~ +85°C 32EP08-M4ETC32 32 8 5.1 LPDDR4x 8x9.5x0.8 144 -25°C ~ +85°C 16EP16-M4FTC32 16 16 5.1 LPDDR4x 8x9.5x0.8 144 -25°C ~ +85°C 32EP16-M4FTC32 32 16 5.1 LPDDR4x 8x9.5x0.8 144 -25°C ~ +85°C 32CP16-M4FTC32 32 16 5.1 LPDDR4x 8x9.5x0.85 144 -25°C ~ +85°C

2024-09-12 15:03:18

application development in Power Supplies - External/Internal (Off-Board) for RC28F160C3TD70A: key technologies and success stories

Application Development in Power Supplies for RC28F160C3TD70A: Key Technologies and Success StoriesThe RC28F160C3TD70A is a NOR flash memory device widely used in applications requiring reliable non-volatile storage. When developing power supplies—both external and internal (off-board)—for this device, several key technologies and success stories can be highlighted. Key Technologies1. Power Management ICs (PMICs)2. Low Dropout Regulators (LDOs)3. Buck Converters4. Power Sequencing5. Thermal Management1. Consumer Electronics2. Automotive Applications3. Industrial Automation4. IoT Devices5. Medical Devices Success Stories ConclusionThe development of power supplies for the RC28F160C3TD70A involves a combination of advanced technologies and careful design considerations. By leveraging PMICs, LDOs, buck converters, and effective power management strategies, developers can create reliable and efficient systems that meet the demands of various applications. The success stories across different industries underscore the versatility and importance of effective power supply design in maximizing the performance of flash memory devices, ultimately leading to enhanced user experiences and system reliability.

2025-04-14 07:22:02

RC28F160C3BD70A Optoelectronics highlighting the core functional technology articles and application development cases of Optoelectronics that are effective.

Overview of Optoelectronics Technology Overview of Optoelectronics Technology Optoelectronics is a branch of technology that focuses on the interaction between light and electronic devices. It encompasses a variety of components that utilize light for various applications, ranging from communication to sensing and illumination. Below is a detailed overview of core functional technologies in optoelectronics and notable application development cases that demonstrate their effectiveness. Core Functional Technologies in Optoelectronics Core Functional Technologies in Optoelectronics 1. Light Emitting Diodes (LEDs)2. Photodetectors3. Laser Diodes4. Optical Sensors5. Optical Fibers1. Smart Lighting Systems2. Optical Communication Networks3. Medical Imaging4. Consumer Electronics5. Environmental Monitoring Application Development Cases Application Development Cases Conclusion Conclusion Optoelectronics is a dynamic and rapidly advancing field that plays a crucial role in modern technology. The integration of optoelectronic components into various systems enhances functionality, efficiency, and user experience across multiple industries. As research and development continue, we can anticipate further innovations and applications that will leverage the unique properties of light and electronics, driving progress in areas such as communication, healthcare, and environmental sustainability.

2025-04-12 23:50:03

What are the important product categories of operational amplifiers?

2025-03-12 10:06:28

What are the product features of dedicated logic?

2025-01-14 19:26:07

What is the price of popular coil models in stock?

2025-01-14 17:36:51

What is the market prospect of inverters?

2025-01-11 18:37:16

What is the current status of the logic industry?

2025-01-06 15:17:19

What are the mainstream models of buffer amplifiers?

A buffer amplifier is a commonly used electronic component that is used to enhance the amplitude and stability of signals. It has a wide range of applications in various electronic devices, such as audio amplifiers, video amplifiers, communication equipment, etc. There are multiple mainstream models of buffer amplifiers based on different application requirements, and below we will introduce some common types.1. Single-Ended Amplifier: Single-ended amplifier is the most basic type of buffer amplifier, with only one input and one output. It is typically used for low-frequency signal amplification, such as audio amplifiers, power amplifiers, etc. Its advantages include simple structure and low cost, but its disadvantage is poor interference resistance.2. Differential Amplifier: Differential amplifier is a commonly used type of buffer amplifier, with two inputs and one output. It can effectively suppress common-mode interference, improve signal interference resistance and stability. It is usually used for high-precision signal amplification, such as instrumentation, communication equipment, etc.3. Operational Amplifier: Operational amplifier is a high-performance buffer amplifier with high gain, high input impedance, low output impedance, etc. It is typically used for applications requiring high precision and stability, such as precision instruments, medical devices, communication systems, etc.4. Voltage Follower: Voltage follower is a special type of buffer amplifier, with its output directly connected to the input, and the output voltage is exactly the same as the input voltage. Voltage follower is usually used for signal isolation, impedance matching, etc., to effectively reduce signal distortion and interference.5. High-Speed Amplifier: High-speed amplifier is a buffer amplifier specifically designed for high-frequency signal amplification, with fast response, high bandwidth, etc. It is typically used for RF signal amplification, communication systems, radar systems, and other high-frequency applications.In summary, there are multiple mainstream models of buffer amplifiers, each with its specific application areas and advantages. When choosing a buffer amplifier, it is important to consider the specific application requirements and performance criteria to ensure system stability and performance. We hope the above introduction can help you better understand the mainstream models and applications of buffer amplifiers.A buffer amplifier is a commonly used electronic component that is used to enhance the amplitude and stability of signals. It has a wide range of applications in various electronic devices, such as audio amplifiers, video amplifiers, communication equipment, etc. There are multiple mainstream models of buffer amplifiers based on different application requirements, and below we will introduce some common types.1. Single-Ended Amplifier: Single-ended amplifier is the most basic type of buffer amplifier, with only one input and one output. It is typically used for low-frequency signal amplification, such as audio amplifiers, power amplifiers, etc. Its advantages include simple structure and low cost, but its disadvantage is poor interference resistance.2. Differential Amplifier: Differential amplifier is a commonly used type of buffer amplifier, with two inputs and one output. It can effectively suppress common-mode interference, improve signal interference resistance and stability. It is usually used for high-precision signal amplification, such as instrumentation, communication equipment, etc.3. Operational Amplifier: Operational amplifier is a high-performance buffer amplifier with high gain, high input impedance, low output impedance, etc. It is typically used for applications requiring high precision and stability, such as precision instruments, medical devices, communication systems, etc.4. Voltage Follower: Voltage follower is a special type of buffer amplifier, with its output directly connected to the input, and the output voltage is exactly the same as the input voltage. Voltage follower is usually used for signal isolation, impedance matching, etc., to effectively reduce signal distortion and interference.5. High-Speed Amplifier: High-speed amplifier is a buffer amplifier specifically designed for high-frequency signal amplification, with fast response, high bandwidth, etc. It is typically used for RF signal amplification, communication systems, radar systems, and other high-frequency applications.In summary, there are multiple mainstream models of buffer amplifiers, each with its specific application areas and advantages. When choosing a buffer amplifier, it is important to consider the specific application requirements and performance criteria to ensure system stability and performance. We hope the above introduction can help you better understand the mainstream models and applications of buffer amplifiers.

2025-01-06 11:47:12

Amplifier product training considerations

2024-12-17 19:14:04

What are the market policies for data collection?

2024-12-14 19:46:35